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RN2412,RN2413
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2412,RN2413
Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN1412, RN1413 Unit in mm
Equivalent Circuit
Maximum Ratings (Ta = 25C)
Characterisstic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating -50 -50 -5 -100 200 150 -55~150 Unit V V V mA mW C C
JEDEC EIAJ TOSHIBA Weight: 0.012g
TO-236MOD SC-59 2-3F1A
000707EAA1
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice.
2001-02-08
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RN2412,RN2413
Electrical Characteristics (Ta = 25C)
Characteristic Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Translation frequency Collector output capacitance Input resistor RN2412 RN2413 Symbol ICBO IEBO hFE VCE (sat) fT Cob R1 Test Circuit Test Condition VCB = -50V, IE = 0 VEB = -5V, IC = 0 VCE = -5V, IC = -1mA IC = -5mA, IB = -0.25mA VCE = -10V, IC = -5mA VCB = -10V, IE = 0, f = 1MHz Min 120 15.4 32.9 Typ. -0.1 250 3 22 47 Max -100 -100 400 -0.3 6 28.6 61.1 Unit nA nA V MHz pF k
2001-02-08
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RN2412,RN2413
2001-02-08
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RN2412,RN2413
Type Name
Marking
RN2412
RN2413
2001-02-08
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